 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FQP10N60C / FQPF10N60C 600V N-Channel MOSFET April 2007 QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features * 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability (R) Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D G GDS TO-220 FQP Series GD S TO-220F FQPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) Drain Current - Pulsed (Note 1) Parameter FQP10N60C 9.5 5.7 38 FQPF10N60C 600 9.5 * 5.7 * 38 * 30 Units V A A A V mJ A mJ V/ns Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds (Note 2) (Note 1) (Note 1) (Note 3) 700 9.5 15.6 4.5 156 1.25 -55 to +150 300 50 0.4 W W/C C C * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP10N60C 0.8 0.5 62.5 FQPF10N60C 2.5 -62.5 Units C/W C/W C/W (c)2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQP10N60C / FQPF10N60C Rev. C FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQP10N60C FQPF10N60C Device FQP10N60C FQPF10N60C Package TO-220 TO-220F Reel Size --- Tape Width --- Quantity 50 50 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------ -0.7 ----- --1 10 100 -100 V V/C A A nA nA Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 4.75 A VDS = 40 V, ID = 4.75 A (Note 4) 2.0 --- -0.6 8.0 4.0 0.73 -- V S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1570 166 18 2040 215 24 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 9.5A, VGS = 10 V (Note 4, 5) (Note 4, 5) VDD = 300 V, ID = 9.5A, RG = 25 -------- 23 69 144 77 44 6.7 18.5 55 150 300 165 57 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 14.2mH, IAS = 9.5 A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 9.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 9.5 A VGS = 0 V, IS = 9.5 A, dIF / dt = 100 A/s (Note 4) ------ ---420 4.2 9.5 38 1.4 --- A A V ns C 2 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : 10 1 10 1 ID, Drain Current [A] ID, Drain Current [A] 150C 25C 10 0 -55C 10 0 10 -1 * Notes : 1. 250s Pulse Test 2. TC = 25C * Notes : 1. VDS = 40V 10 -1 2. 250s Pulse Test 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2.0 RDS(ON) [], Drain-Source On-Resistance IDR, Reverse Drain Current [A] 1.5 10 1 VGS = 10V 1.0 10 0 0.5 VGS = 20V 150C 25C 10 -1 * Notes : 1. VGS = 0V 2. 250s Pulse Test * Note : TJ = 25C 0.0 0 5 10 15 20 25 30 35 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Figure 6. Gate Charge Characteristics 12 2500 Crss = Cgd 10 VDS = 120V VDS = 300V Ciss VGS, Gate-Source Voltage [V] Capacitance [pF] 2000 8 VDS = 480V 1500 Coss 6 1000 * Notes ; 1. VGS = 0 V 4 Crss 500 2. f = 1 MHz 2 * Note : ID = 9.5A 0 -1 10 0 10 0 10 1 0 10 20 30 40 50 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 * Notes : 1. VGS = 0 V 2. ID = 250A 0.5 * Notes : 1. VGS = 10 V 2. ID = 4.75 A 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [C] TJ, Junction Temperature [C] Figure 9-1. Maximum Safe Operating Area for FQP10N60C 10 2 Figure 9-2. Maximum Safe Operating Area for FQPF10N60C 2 Operation in This Area is Limited by R DS(on) 10 s 100 s 10 Operation in This Area is Limited by R DS(on) 10 s ID, Drain Current [A] 100 s ID, Drain Current [A] 10 1 1 ms 10 ms 100 ms DC 10 1 10 0 1 ms 10 ms 100 ms DC 10 0 * Notes : 1. TC = 25C 2. TJ = 150C 3. Single Pulse 10 -1 * Notes : 1. TC = 25C 2. TJ = 150C 3. Single Pulse 10 -1 10 0 10 1 10 2 10 3 10 -2 10 0 10 1 10 2 10 3 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 10 8 ID, Drain Current [A] 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [C] 4 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FQP10N60C 0 10 D = 0 .5 (t), Thermal Response 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e * N o te s : 1 . Z JC ( t) = 0 .8 C /W M a x . 2 . D u ty F a c to r , D = t1/t2 3 . T JM - T C = P D M * Z JC ( t) PDM t1 t2 Z JC 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF10N60C 10 0 D = 0 .5 (t), Thermal Response 0 .2 0 .1 0 .0 5 10 -1 * N o te s : 1 . Z JC ( t) = 2 .5 C /W M a x . 2 . D u ty F a c to r , D = t1 /t2 3 . T JM - T C = P D M * Z JC ( t) 0 .0 2 0 .0 1 s in g le p u ls e 10 -2 Z JC PDM t1 t2 -3 10 -5 10 -4 10 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] 5 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Mechanical Dimensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters 8 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Mechanical Dimensions (Continued) TO-220F 3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70) 6.68 0.20 15.80 0.20 (1.00x45) MAX1.47 9.75 0.30 0.80 0.10 (3 0 ) 0.35 0.10 2.54TYP [2.54 0.20] #1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20 +0.10 2.76 0.20 9.40 0.20 Dimensions in Millimeters 9 FQP10N60C / FQPF10N60C Rev. C 15.87 0.20 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Across the board. Around the world.TM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM 2 E CMOSTM (R) EcoSPARK EnSignaTM FACT Quiet SeriesTM (R) FACT (R) FAST FASTrTM FPSTM (R) FRFET GlobalOptoisolatorTM GTOTM HiSeCTM (R) i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM Motion-SPMTM MSXTM MSXProTM OCXTM OCXProTM (R) OPTOLOGIC (R) OPTOPLANAR PACMANTM PDP-SPMTM POPTM (R) Power220 (R) Power247 PowerEdgeTM PowerSaverTM Power-SPMTM (R) PowerTrench Programmable Active DroopTM (R) QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM (R) SPM STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM (R) The Power Franchise TM TinyBoostTM TinyBuckTM (R) TinyLogic TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM (R) UHC UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I26 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. No Identification Needed Full Production Obsolete Not In Production (c) 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com |
Price & Availability of FQP10N60C07
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |